Oxford Instruments™ RF sputtering system can sputter on planar substrates maximum up to 8” wafer in size, hence, it keeps the space of accommodating various substrate sizes as per application needs. The system has four RF magnetron with a dedicated RF power supply. The system has three Mass Flow Controllers (MFCs) that are currently being used for the sputter gas. Generally, in a sputtering tool, a permanent magnet is set up behind the cathode-which is in contact with the loaded target to create electronic traps. A process gas, generally ‘Ar’, with positive ions is introduced in the chamber and such ions are attracted to the cathode. Ions usually strike the target and eject atoms by means of momentum transfer and emitting more electrons. Such process will create a uniform layer on the substrates at the process pressure of 10-3 to 10-4 torr.