Atomic Layer Deposition (ALD) technique is significantly important to develop thin films with a precision of atomistic growth. Such sequentially pulsed process involves the gaseous phase to build a successive monolayer of film on the substrates. In addition, the reactive process also involves the use of hazardous precursor materials. This technique can be marked as Chemical Vapor Deposition (CVD) technique where minimum two gas precursors are required to be pulsed sequentially and precisely inside the deposition chamber. Such process includes both pulse and purges. Purging is essential to remove any additional element because of by-products due to the reactive phases where the entire process completes generally by four steps. During each pulse step, chemical reactions between precursor molecules and active surface species yield new surface species that passivate the surface. Once the surface passivates entirely, reactions are complete and result in the formation of a limited number of new surface species.