Focused Ion Beam (FIB) technique is a versatile method used in materials science, nanotechnology, and semiconductor industries for precise material removal, deposition, and analysis at the nanoscale. The FIB system works by generating a focused beam of charged ions (gallium ions) that can be rastered across the sample's surface, similar to the electron beam in a scanning electron microscope (SEM). The primary applications of FIB include high-resolution imaging, site-specific sample preparation, and nanofabrication.